FDSOI specific design techniques for analog, RF and mmW applications

Andreia Cathelin, Fellow, STMicroelectronics Crolles, France

                Abstract: This course will first present a very short overview of the major analog and RF technology features of 28nm FDSOI technology. Then we will focus on the benefits of FD-SOI technology for analog/RF and millimeter-wave circuits. Design examples such as analog low-pass filter, inverter-based analog amplifiers and 30GHz and 60GHz Power Amplifiers, as well as mmW oscillators are given. A special focus will be done on the advantages of body biasing and special design techniques offering state of the art performance.


Circuit Design Techniques in 22nm FD-SOI for 5G 28GHz Applications

Frank Zhang, Principal Member of Technical Staff, Globalfoundries

                Abstract: This course will focus on taking advantages of FD-SOI’s high frequency performance at relatively low current density to design high performance RF/mmWave circuits.  Examples circuits include a 28GHz LNA, a 28GHz PA and an RF switch for 5G applications.  The FD-SOI advantages such as low capacitance, high breakdown voltage and high output impedance will be exploited in these design examples.   This course will also discuss how to extend these techniques to applications to higher frequencies and/or higher current densities that are subject to extreme temperatures and EM requirements.


Energy-Efficient Design in FDSOI

Bora Nikolic, Professor, UC Berkeley, Berkeley, USA

               Abstract: This talk presents options for energy-efficient mixed-signal and digital design in FDSOI technologies. Effective generation of body bias and its use to improve efficiency will be presented on the examples of RF and baseband building blocks, temperature sensors, data converters and voltage regulators.  The techniques will be presented within a concept of a RISC-V-based SoC, designed to operate in a very wide voltage range utilizing 28nm FDSOI.


mm-Wave and Fiber-optics Design in FD-SOI CMOS Technologies

Sorin Voinigescu, Professor, University of Toronto, Toronto, Canada

                Abstract: This lecture will cover the main features of FD-SOI CMOS technology and how to efficiently use its unique features and suitable circuit topologies for mm-wave and broadband SoCs. I will overview the impact of the back-gate bias and temperature on the measured I-V, transconductance,  fT, and fMAX characteristics and compare the maximum available gain, MAG, of FDSOI MOSFETs with those of planar bulk CMOS and SiGe BiCMOS transistors through measurements up to 325 GHz. Next, biasing, sizing and step-by-step design examples will be provided for VCO, doubler, switches, PA, large swing optical modulator drivers and quasi-CML circuit topologies and layouts that make efficient use of the back-gate bias to overcome the limitations associated with the low breakdown voltage of 20nm and 12nm FDSOI CMOS technologies.